ON Semiconductor Transistor (BJT) - Discrete BD676 TO 225AA No. of channels 1 PNP - Darlington
Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.
ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN
Manufacturer SIE=INF,HAR=FSC,MOT=ONS.
ON Semiconductor Transistor (BJT) - Discrete BD810G TO 220AB No. of channels 1 PNP
Manufacturer SIE=INF,HAR=FSC,MOT=ONS.
ON Semiconductor Transistor (BJT) - Discrete BSP52T1G SOT 223 NPN Tape on Full reel
Collector current: 1 A; Collector emitter voltage U(CEO): 80 V; DC current gain hFE - reference current: 1 µA; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BUX85G TO 220AB No. of channels 1 NPN
Collector current: 2 A; Collector cutoff current: 200 µA; Collector emitter voltage U(CEO): 450 V; Collector-emitter saturation voltage (max.): 1 V; DC current gain (hFE): 30; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference...
ON Semiconductor Transistor (BJT) - Discrete D44H11TU TO 220 3 No. of channels 1 NPN
Collector current: 10 A; Collector cutoff current: 10 µA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.): 1 V; DC current gain (hFE): 40; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference...
ON Semiconductor Transistor (BJT) - Discrete KSP44TA TO 92 3 No. of channels 1 NPN
Collector current: 300 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 400 V; Collector-emitter saturation voltage (max.): 750 mV; DC current gain (hFE): 50; DC current gain hFE - reference current: 10 mA; DC current gain hFE -...
ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington
Collector current: -30 A; Collector cutoff current: -1 mA; Collector emitter voltage U(CEO): -120 V; Collector-emitter saturation voltage (max.): -4 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: -20 A; DC current gain hFE -...
ON Semiconductor Transistor (BJT) - Discrete MJ11016G TO 3 No. of channels 1 NPN - Darlington
Collector current: 30 A; Collector cutoff current: 1 mA; Collector emitter voltage U(CEO): 120 V; Collector-emitter saturation voltage (max.): 4 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: 20 A; DC current gain hFE - reference...