ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington

Collector current: -30 A; Collector cutoff current: -1 mA; Collector emitter voltage U(CEO): -120 V; Collector-emitter saturation voltage (max.): -4 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: -20 A; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 200 W; Transit frequency f(T): 4 MHz; Type (transistors): PNP - Darlington

Price: 12.99 from Conrad Electronic