ON Semiconductor Transistor (BJT) - Discrete MJ11016G TO 3 No. of channels 1 NPN - Darlington

Collector current: 30 A; Collector cutoff current: 1 mA; Collector emitter voltage U(CEO): 120 V; Collector-emitter saturation voltage (max.): 4 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: 20 A; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 200 W; Transit frequency f(T): 4 MHz; Type (transistors): NPN - Darlington

Price: 12.99 from Conrad Electronic