ON Semiconductor Transistor (BJT) - Discrete BUX85G TO 220AB No. of channels 1 NPN

Collector current: 2 A; Collector cutoff current: 200 µA; Collector emitter voltage U(CEO): 450 V; Collector-emitter saturation voltage (max.): 1 V; DC current gain (hFE): 30; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 50 W; Transit frequency f(T): 4 MHz; Type (transistors): NPN

Price: 1.49 from Conrad Electronic