Breakdown voltage U(BR): 61.60 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 45.4 V
Breakdown voltage U(BR): 7.14 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 5.8 V
For protection of valuable digital and hybrid switches, microprocessors and data lines from overvoltage pulses. Types ending in "A" are unidirectional, types ending in "CA" are bi-directional.
Breakdown voltage U(BR): 71.40 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 58.1 V
Breakdown voltage U(BR): 86.10 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 70.1 V
Breakdown voltage U(BR): 420 V; Enclosure type (semiconductors): DO 214AA; Mounting type: Surface-mount; Reverse voltage U(R): 342 V
Additional technical information: Type SMDHOUSING: DO-214AA/SMBTermination of voltage - VBRmin 11.10 VVBRmax 12.30 VIt 1 mAPulse power loss - PPPM 600 WJunction temperature - Tjmax 150 °CReverse voltage - VWM 10.0 VMaximum reverse current ID @ VWM: 5,000...
Breakdown voltage U(BR): 13.3 V; Enclosure type (semiconductors): DO 214AA; Manufacturer code (components): DIO; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -50 °C; Peak...
Additional technical information: Type SMDHOUSING: DO-214AA/SMBTermination of voltage - VBRmin 16.70 VVBRmax 18.60 VIt 1 mAPulse power loss - PPPM 600 WJunction temperature - Tjmax 150 °CReverse voltage - VWM 15.0 VMaximum reverse current ID @ VWM: 5,000...
Additional technical information: Type SMDHOUSING: DO-214AA/SMBTermination of voltage - VBRmin 26.70 VVBRmax 29.60 VIt 1 mAPulse power loss - PPPM 600 WJunction temperature - Tjmax 150 °CReverse voltage - VWM 24.0 VMaximum reverse current ID @ VWM: 5,000...