Breakdown voltage U(BR): 504 V; Enclosure type (semiconductors): DO 214AC; Mounting type: Surface-mount; Reverse voltage U(R): 408 V
Additional technical information: Type SMDHOUSING: DO-214AC/SMATermination of voltage - VBRmin 167.00 VVBRmax 185.00 VIt 1 mAPulse power loss - PPPM 400 WJunction temperature - Tjmax 150 °CReverse voltage - VWM 150.0 VMaximum reverse current ID @ VWM:...
Additional technical information: Type SMDHOUSING: DO-214AC/SMATermination of voltage - VBRmin 31.10 VVBRmax 37.90 VIt 1 mAPulse power loss - PPPM 400 WJunction temperature - Tjmax 150 °CReverse voltage - VWM 28.0 VMaximum reverse current ID @ VWM: 5,000...
Breakdown voltage U(BR): 36.7 V; Enclosure type (semiconductors): DO 214AC; Manufacturer code (components): DIO; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -50 °C; Peak...
Breakdown voltage U(BR): 121 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 89.2 V
For protection of valuable digital and hybrid switches, microprocessors and data lines from overvoltage pulses. Types ending in "A" are unidirectional, types ending in "CA" are bi-directional.
Breakdown voltage U(BR): 143 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 105 V
Breakdown voltage U(BR): 14.30 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 10.5 V
For protection of valuable digital and hybrid switches, microprocessors and data lines from overvoltage pulses. Types ending in "A" are unidirectional, types ending in "CA" are bi-directional.
Breakdown voltage U(BR): 176 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 130 V