Additional technical information: Type AxialDO-15 housingTermination of voltage - VBRmin 17.10 VVBRmax 18.90 VIt 1 mAPulse power loss - PPPM 600 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 15.3 VMaximum reverse current ID @ VWM: 5,000 µAMaximum...
Breakdown voltage U(BR): 21 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 17.1 V
For protection of valuable digital and hybrid switches, microprocessors and data lines from overvoltage pulses. Types ending in "A" are unidirectional, types ending in "CA" are bi-directional.
Breakdown voltage U(BR): 37.80 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 30.8 V
For protection of valuable digital and hybrid switches, microprocessors and data lines from overvoltage pulses. Types ending in "A" are unidirectional, types ending in "CA" are bi-directional.
Breakdown voltage U(BR): 45.20 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 36.8 V
Breakdown voltage U(BR): 48.5 V; Enclosure type (semiconductors): DO 204AC; Manufacturer code (components): DIO; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -50 °C; Peak...
Breakdown voltage U(BR): 71.40 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 58.1 V
Breakdown voltage U(BR): 7.14 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 5.8 V
Breakdown voltage U(BR): 10.50 V; Enclosure type (semiconductors): DO 15; Mounting type: Through-hole mounting; Reverse voltage U(R): 8.6 V