Collector current: 46 A; Collector cutoff current: 350 µA; Collector emitter reverse voltage U(CES): 1200 V; Collector-emitter saturation voltage (max.): 3.6 V; Configuration (transistors): single; Enclosure type (semiconductors): TO247 3 PG; I(CM):...
Cut-off voltage U(DSS): 800 V; Enclosure type (semiconductors): TO-220-FULLPAK; I(d): 8 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 40 W; R(DS)(on): 0.65 Ω; Type (transistors): N-channel
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): TO 220; I(d): -18.70 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 81.1 W; R(DS)(on): 0.13 Ω; Type (transistors): P-channel
Cut-off voltage U(DSS): 650 V; Enclosure type (semiconductors): TO 220; I(d): 20.70 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 208 W; R(DS)(on): 0.19 Ω; Type (transistors): N-channel
Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 220; I(d): 20 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 208 W; R(DS)(on): 0.19 Ω; Type (transistors): N-channel
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): TO 220; I(d): -80 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 340 W; R(DS)(on): 0.023 Ω; Type (transistors): P-channel
C(ISS): 3000 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 247; I(d): 20 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150...
Switching diode (8 mm tape)