Infineon Technologies IRLML6402TRPBF MOSFET 1 P-channel 1.3 W SOT 23
C(ISS): 633 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SOT 23; I(d): 3.7 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies IRLML9301TRPBF MOSFET 1 P-channel 1.3 W SOT 23
C(ISS): 388 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOT 23; I(d): 3.6 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies IRLML9303TRPBF MOSFET 1 P-channel 1.25 W SOT 23
C(ISS): 160 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOT 23; I(d): 2.3 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies IRLR024NPBF-GURT MOSFET 1 N-channel 45 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 17 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 45 W; R(DS)(on): 0.11 Ω; Type (transistors): N-channel
Infineon Technologies IRLR120N MOSFET 1 N-channel 48 W TO 263 3
C(ISS): 440 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 263 3; I(d): 10 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.):...
Infineon Technologies IRLR120NPBF-GURT MOSFET 1 N-channel 48 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 10 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 48 W; R(DS)(on): 0.265 Ω; Type (transistors): N-channel
Infineon Technologies IRLR2705PBF-GURT MOSFET 1 N-channel 68 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 28 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 68 W; R(DS)(on): 0.065 Ω; Type (transistors): N-channel
Infineon Technologies IRLR2905PBF-GURT MOSFET 1 N-channel 68 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 28 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 68 W; R(DS)(on): 0.065 Ω; Type (transistors): N-channel
Infineon Technologies IRLR2905TRPBF MOSFET 1 N-channel 110 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 42 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.04 Ω; Type (transistors): N-channel
Infineon Technologies IRLR2905ZPBF-GURT MOSFET 1 N-channel 110 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 42 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.0225 Ω; Type (transistors): N-channel