Enclosure type (semiconductors): DO 214AA; Forward current I(F): 3 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 90 A; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R): 1000...
Enclosure type (semiconductors): DO 214AB; Forward current I(F): 3 A; Forward voltage U(F): 1.15 V; I(FSM) 50Hz: 100 A; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R): 1800...
Enclosure type (semiconductors): DO 214AB; Forward current I(F): 5 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 225 A; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 10 µA; Reverse voltage U(R): 200...
Enclosure type (semiconductors): DO 214AB; Forward current I(F): 5 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 225 A; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 10 µA; Reverse voltage U(R): 600...
Enclosure type (semiconductors): DO 214AB; Forward current I(F): 5 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 225 A; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 10 µA; Reverse voltage U(R): 2000...
Enclosure type (semiconductors): DO 213AB; Forward current I(F): 2 A; Forward voltage U(F): 1.80 V; I(FSM) 50Hz: 45 A; Mounting type: Surface-mount; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse recovery time T(rr):...
Enclosure type (semiconductors): DO 213AB; Forward current I(F): 3 A; Forward voltage U(F): 1.20 V; I(FSM) 50Hz: 100 A; Mounting type: Surface-mount; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R): 500...
Enclosure type (semiconductors): SMAF; Forward current I(F): 1 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 30 A; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R): 1000 V
Enclosure type (semiconductors): DO 213AB; Forward current I(F): 1 A; Forward voltage U(F): 1.25 V; I(FSM) 50Hz: 27 A; Mounting type: Surface-mount; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse recovery time T(rr):...
Additional technical information: Type AxialDO-41 housingPeriodic Peak Reverse Voltage - VRRM 400 VContinuous current - IFAV 1.00 AJunction temperature - Tjmax 175 °CReverse delay time - trr: 50 nsSurge current - IFSM 30.00 AForward voltage - VF 1.25...