Additional technical information: Type AxialHousing: D8x7.5Periodic Peak Reverse Voltage - VRRM 300 VContinuous current - IFAV 6.00 AJunction temperature - Tjmax 175 °CReverse delay time - trr: 50 nsSurge current - IFSM 200.00 AForward voltage - VF 1.00...
Additional technical information: Type SMDHOUSING: TO-263AB/D2PAKPeriodic Peak Reverse Voltage - VRRM 200 VContinuous current - IFAV 20.00 AJunction temperature - Tjmax 150 °CReverse delay time - trr: 200 nsSurge current - IFSM 375.00 AForward voltage...
Additional technical information: Type SMDHOUSING: DO-214AC/SMAPeriodic Peak Reverse Voltage - VRRM 100 VContinuous current - IFAV 1.00 AJunction temperature - Tjmax 150 °CForward voltage - VF 1.10 VIF 1.00 ASurge current - IFSM 27.00 AReverse current...
Additional technical information: Type SMDHOUSING: DO-214AC/SMAPeriodic Peak Reverse Voltage - VRRM 1000 VContinuous current - IFAV 1.00 AJunction temperature - Tjmax 150 °CForward voltage - VF 1.10 VIF 1.00 ASurge current - IFSM 27.00 AReverse current...
Enclosure type (semiconductors): D8x7.5; Forward current I(F): 5 A; Forward voltage U(F): 1.20 V; I(FSM) 50Hz: 300 A; Mounting type: Through-hole mounting; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 10 µA; Reverse recovery time...
Enclosure type (semiconductors): TO 220AC; Forward current I(F): 15 A; Forward voltage U(F): 1.70 V; I(FSM) 50Hz: 160 A; Mounting type: Through-hole mounting; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse recovery...
Enclosure type (semiconductors): DO 41; Forward current I(F): 1 A; Forward voltage U(F): 1.25 V; I(FSM) 50Hz: 32 A; Mounting type: Through-hole mounting; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse recovery time...
Enclosure type (semiconductors): DO 201; Forward current I(F): 4 A; Forward voltage U(F): 0.89 V; I(FSM) 50Hz: 110 A; Mounting type: Through-hole mounting; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse recovery time...
Enclosure type (semiconductors): DO 201; Forward current I(F): 4 A; Forward voltage U(F): 1.28 V; I(FSM) 50Hz: 100 A; Mounting type: Through-hole mounting; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse recovery time...
Enclosure type (semiconductors): DO 201; Forward current I(F): 4 A; Forward voltage U(F): 1.28 V; I(FSM) 50Hz: 110 A; Mounting type: Through-hole mounting; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 10 µA; Reverse recovery time...