Enclosure type (semiconductors): DO 201; Forward current I(F): 3 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 100 A; Mounting type: Through-hole mounting; Operating temperature (max.): 150 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R):...
Additional technical information: Type AxialDO-201 housingPeriodic Peak Reverse Voltage - VRRM 1650 VContinuous current - IFAV 1.50 AJunction temperature - Tjmax 175 °CForward voltage - VF 1.30 VIF 3.00 ASurge current - IFSM 40.00 AReverse current -...
Additional technical information: Type AxialHousing: D5.4x7.5Periodic Peak Reverse Voltage - VRRM 100 VContinuous current - IFAV 8.00 AJunction temperature - Tjmax 175 °CForward voltage - VF 1.10 VIF 8.00 ASurge current - IFSM 400.00 AReverse current...
Additional technical information: Type AxialHousing: D5.4x7.5Periodic Peak Reverse Voltage - VRRM 1400 VContinuous current - IFAV 8.00 AJunction temperature - Tjmax 175 °CForward voltage - VF 1.10 VIF 8.00 ASurge current - IFSM 400.00 AReverse current...
Additional technical information: Type AxialHousing: D5.4x7.5Periodic Peak Reverse Voltage - VRRM 50 VContinuous current - IFAV 8.00 AJunction temperature - Tjmax 175 °CForward voltage - VF 1.10 VIF 8.00 ASurge current - IFSM 400.00 AReverse current...
Enclosure type (semiconductors): DO 213AB; Forward current I(F): 1 A; Forward voltage U(F): 1.2 V; Forward voltage reference: 1 A; Manufacturer code (components): DIO; Mounting type: Surface-mount; Operating temperature (max.): +175 °C; Operating temperature...
Additional technical information: Type AxialDO-41 housingPeriodic Peak Reverse Voltage - VRRM 400 VContinuous current - IFAV 1.00 AJunction temperature - Tjmax 175 °CForward voltage - VF 1.30 VIF 1.00 ASurge current - IFSM 50.00 AReverse current - IR...
Enclosure type (semiconductors): DO 213AA; Forward current I(F): 1 A; Forward voltage U(F): 1.35 V; I(FSM) 50Hz: 25 A; Mounting type: Surface-mount; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 3 µA; Reverse recovery time T(rr):...
Enclosure type (semiconductors): DO 41; Forward current I(F): 1 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 27 A; Mounting type: Through-hole mounting; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R):...
Enclosure type (semiconductors): DO 41; Forward current I(F): 1 A; Forward voltage U(F): 1.10 V; I(FSM) 50Hz: 27 A; Mounting type: Through-hole mounting; Operating temperature (max.): 175 °C; Reverse leakage current I(r): 5 µA; Reverse voltage U(R):...