Infineon Technologies IRF7404PBF-GURT MOSFET 1 P-channel 2.5 W SO 8
Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SO 8; I(d): 6.7 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.04 Ω; Type (transistors): P-channel
Infineon Technologies IRF7413ZPBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 13 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.01 Ω; Type (transistors): N-channel
Infineon Technologies IRF7416PBF-GURT MOSFET 1 P-channel 2.5 W SO 8
Cut-off voltage U(DSS): -30 V; Enclosure type (semiconductors): SO 8; I(d): -10 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.02 Ω; Type (transistors): P-channel
Infineon Technologies IRF7459 MOSFET 1 N-channel 2.5 W SO 8
C(ISS): 2480 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SO 8; I(d): 12 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies IRF7470PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 40 V; Enclosure type (semiconductors): SO 8; I(d): 10 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.013 Ω; Type (transistors): N-channel
Infineon Technologies IRF7821PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 13.60 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.0091 Ω; Type (transistors): N-channel
Infineon Technologies IRF7842PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 40 V; Enclosure type (semiconductors): SO 8; I(d): 18 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.005 Ω; Type (transistors): N-channel
Infineon Technologies IRF7853PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): SO 8; I(d): 8.3 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.018 Ω; Type (transistors): N-channel
Infineon Technologies IRF7855PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SO 8; I(d): 12 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.0094 Ω; Type (transistors): N-channel
Infineon Technologies IRF8010PBF MOSFET 1 N-channel 260 W TO 220AB
C(ISS): 3830 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 80 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.):...