Infineon Technologies IRF7314PBF-GURT MOSFET 2 P-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.098 Ω; Type (transistors): P-channel
Infineon Technologies IRF7316PBF-GURT MOSFET 2 P-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.098 Ω; Type (transistors): P-channel
Infineon Technologies IRF7319PBF-GURT MOSFET 2 N-channel , P-channel 2.0 W SO 8
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 6.5 A; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.098 Ω; Type (transistors): N-channel , P-channel
Infineon Technologies IRF7324PBF-GURT MOSFET 2 P-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.026 Ω; Type (transistors): P-channel
Infineon Technologies IRF7341PBF-GURT MOSFET 2 N-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.065 Ω; Type (transistors): N-channel
Infineon Technologies IRF7342PBF-GURT MOSFET 2 P-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.17 Ω; Type (transistors): P-channel
Infineon Technologies IRF7343PBF-GURT MOSFET 2 N-channel , P-channel 2.0 W SO 8
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): SO 8; I(d): 4.7 A; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.17 Ω; Type (transistors): N-channel , P-channel
Infineon Technologies IRF7380PBF-GURT MOSFET 2 N-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.073 Ω; Type (transistors): N-channel
Infineon Technologies IRF7402 MOSFET 1 N-channel 2.5 W SOIC 8
C(ISS): 650 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SOIC 8; I(d): 6.8 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies IRF7403 MOSFET 1 N-channel 2.5 W SOIC 8
C(ISS): 1200 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOIC 8; I(d): 8.5 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...