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Image of Infineon Technologies IRF5305PBF MOSFET 1 P-channel 110 W TO 220AB
 

Infineon Technologies IRF5305PBF MOSFET 1 P-channel 110 W TO 220AB

C(ISS): 1200 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220AB; I(d): 31 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF5305SPBF-GURT MOSFET 1 P-channel 110 W D2PAK
 

Infineon Technologies IRF5305SPBF-GURT MOSFET 1 P-channel 110 W D2PAK

Cut-off voltage U(DSS): -55 V; Enclosure type (semiconductors): D2PAK; I(d): -31 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.06 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies IRF530N MOSFET 1 N-channel 3.8 W TO 263 3
 

Infineon Technologies IRF530N MOSFET 1 N-channel 3.8 W TO 263 3

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRF530NPBF MOSFET 1 N-channel 70 W TO 220AB
 

Infineon Technologies IRF530NPBF MOSFET 1 N-channel 70 W TO 220AB

Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 17 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 70 W; R(DS)(on): 0.09 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF530NSPBF-GURT MOSFET 1 N-channel 70 W D2PAK
 

Infineon Technologies IRF530NSPBF-GURT MOSFET 1 N-channel 70 W D2PAK

Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): D2PAK; I(d): 17 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 70 W; R(DS)(on): 0.09 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF540NPBF MOSFET 1 N-channel 130 W TO 220
 

Infineon Technologies IRF540NPBF MOSFET 1 N-channel 130 W TO 220

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRF540NSPBF-GURT MOSFET 1 N-channel 130 W D2PAK
 

Infineon Technologies IRF540NSPBF-GURT MOSFET 1 N-channel 130 W D2PAK

Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): D2PAK; I(d): 33 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 130 W; R(DS)(on): 0.044 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF540ZPBF MOSFET 1 N-channel 92 W TO 220AB
 

Infineon Technologies IRF540ZPBF MOSFET 1 N-channel 92 W TO 220AB

C(ISS): 1770 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 36 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.):...


 
Image of Infineon Technologies IRF630N MOSFET 1 N-channel 82 W TO 263 3
 

Infineon Technologies IRF630N MOSFET 1 N-channel 82 W TO 263 3

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRF630NPBF MOSFET 1 N-channel 82 W TO 220AB
 

Infineon Technologies IRF630NPBF MOSFET 1 N-channel 82 W TO 220AB

C(ISS): 575 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): TO 220AB; I(d): 9.3 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.):...