ON Semiconductor Standard diode 1N5402RLG DO 201AD 200 V 3 A
Enclosure type (semiconductors): DO 201AD; Forward current I(F): 3 A; Forward voltage U(F): 1.2 V; Forward voltage reference: 3 A; Manufacturer code (components): OnS; Mounting type: Through-hole; Operating temperature (max.): +150 °C; Operating temperature...
ON Semiconductor Standard diode 1N914ATR DO 204AH 100 V 200 mA
Enclosure type (semiconductors): DO 204AH; Forward current I(F): 200 mA; Forward voltage U(F): 1 V; Forward voltage reference: 20 mA; Manufacturer code (components): OnS; Mounting type: Through-hole; Operating temperature (max.): +175 °C; Reverse leakage...
ON Semiconductor Standard diode BAV99 SOT 23 70 V 200 mA
Enclosure type (semiconductors): SOT 23; Forward current I(F): 200 mA; Forward voltage U(F): 1.25 V; Forward voltage reference: 150 mA; Manufacturer code (components): OnS; Mounting type: Surface-mount; Operating temperature (max.): +150 °C; Operating...
On Semiconductor TIP32AG 60V PNP GP Transistor
High Power PNP Transistors - On Semiconductor TIP32AG, A PNP power transistor that is suitable for a wide variety of switching and amplifier applications, series and shunt regulators, driver and output stages of Hi-Fi amplifiers. On Semiconductor TIP32AG...
ON Semiconductor Transistor (BJT) - Discrete 2N3055G TO 3 No. of channels 1 NPN
Collector current: 15 A; Collector cutoff current: 700 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 3 V; DC current gain (hFE): 20; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference...
ON Semiconductor Transistor (BJT) - Discrete 2N3773 TO 3 No. of channels 1 NPN
Collector current: 16 A; Collector cutoff current: 10 mA; Collector emitter voltage U(CEO): 140 V; Collector-emitter saturation voltage (max.): 1.4 V; DC current gain (hFE): 15; DC current gain hFE - reference current: 8 A; DC current gain hFE - reference...
ON Semiconductor Transistor (BJT) - Discrete 2N3904BU TO 92 3 No. of channels 1 NPN
Collector current: 200 mA; Collector emitter voltage U(CEO): 40 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 10 mA; DC current gain hFE - reference voltage: 1 V; Enclosure...
ON Semiconductor Transistor (BJT) - Discrete 2N3904TA TO 92 3 No. of channels 1 NPN
Collector current: 200 mA; Collector emitter voltage U(CEO): 40 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 10 mA; DC current gain hFE - reference voltage: 1 V; Enclosure...
ON Semiconductor Transistor (BJT) - Discrete 2N3906BU TO 92 3 No. of channels 1 PNP
Collector current: -200 mA; Collector emitter voltage U(CEO): -40 V; Collector-emitter saturation voltage (max.): -400 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -1 V; Enclosure...
ON Semiconductor Transistor (BJT) - Discrete 2N3906TA TO 92 3 No. of channels 1 PNP
Collector current: -200 mA; Collector emitter voltage U(CEO): -40 V; Collector-emitter saturation voltage (max.): -400 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -1 V; Enclosure...