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Image of Infineon Technologies IRF3710Z MOSFET 1 N-channel 160 W TO 263 3
 

Infineon Technologies IRF3710Z MOSFET 1 N-channel 160 W TO 263 3

C(ISS): 2900 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 263 3; I(d): 59 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.):...


 
Image of Infineon Technologies IRF3710ZPBF MOSFET 1 N-channel 160 W TO 220AB
 

Infineon Technologies IRF3710ZPBF MOSFET 1 N-channel 160 W TO 220AB

Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 59 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 160 W; R(DS)(on): 0.018 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF3808PBF MOSFET 1 N-channel 330 W TO 220AB
 

Infineon Technologies IRF3808PBF MOSFET 1 N-channel 330 W TO 220AB

Cut-off voltage U(DSS): 75 V; Enclosure type (semiconductors): TO 220AB; I(d): 140 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 330 W; R(DS)(on): 0.007 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF4104PBF MOSFET 1 N-channel 140 W TO 220AB
 

Infineon Technologies IRF4104PBF MOSFET 1 N-channel 140 W TO 220AB

C(ISS): 3000 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 40 V; Enclosure type (semiconductors): TO 220AB; I(d): 75 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF4905PBF MOSFET 1 P-channel 200 W TO 220
 

Infineon Technologies IRF4905PBF MOSFET 1 P-channel 200 W TO 220

C(ISS): 3400 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220; I(d): 74 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF4905SPBF-GURT MOSFET 1 P-channel 170 W D2PAK
 

Infineon Technologies IRF4905SPBF-GURT MOSFET 1 P-channel 170 W D2PAK

Cut-off voltage U(DSS): -55 V; Enclosure type (semiconductors): D2PAK; I(d): -42 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 170 W; R(DS)(on): 0.02 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies IRF520NPBF MOSFET 1 N-channel 48 W TO 220
 

Infineon Technologies IRF520NPBF MOSFET 1 N-channel 48 W TO 220

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRF5210PBF MOSFET 1 P-channel 200 W TO 220
 

Infineon Technologies IRF5210PBF MOSFET 1 P-channel 200 W TO 220

C(ISS): 2700 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220; I(d): 40 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF5210SPBF-GURT MOSFET 1 P-channel 170 W D2PAK
 

Infineon Technologies IRF5210SPBF-GURT MOSFET 1 P-channel 170 W D2PAK

Cut-off voltage U(DSS): -100 V; Enclosure type (semiconductors): D2PAK; I(d): -38 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 170 W; R(DS)(on): 0.06 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies IRF5305 MOSFET 1 P-channel 3.8 W TO 263 3
 

Infineon Technologies IRF5305 MOSFET 1 P-channel 3.8 W TO 263 3

C(ISS): 1200 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 263 3; I(d): 31 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.):...