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Image of Infineon Technologies HF transistor BFP196W SOT 343 No. of channels 1 NPN
 

 
Image of Infineon Technologies HF transistor BFP420 SC 82A No. of channels 1 NPN
 

Infineon Technologies HF transistor BFP420 SC 82A No. of channels 1 NPN

Collector current: 35 mA; Collector emitter voltage U(CEO): 5 V; DC current gain (hFE): 60; DC current gain hFE - reference current: 20 mA; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): SC 82A; Manufacturer code (components):...


 
Image of Infineon Technologies HF transistor BFR181W SOT 323 No. of channels 1 NPN
 

 
Image of Infineon Technologies HF transistor BFR193 TO 236 3 No. of channels 1 NPN
 

 
Image of Infineon Technologies HF transistor BFR93A TO 236 3 No. of channels 1 NPN
 

 
Image of Infineon Technologies ICE2PCS01G PMIC - PFC 450 µA PG DSO 8
 

Infineon Technologies ICE2PCS01G PMIC - PFC 450 µA PG DSO 8

Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.


 
Image of Infineon Technologies ICE3B1565J PMIC - AC/DC converter, offline switcher Flyback Soft Start PG DIP 8
 

Infineon Technologies ICE3B1565J PMIC - AC/DC converter, offline switcher Flyback Soft Start PG DIP 8

Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.


 
Image of Infineon Technologies IGB10N60TATMA1 IGBT TO 263 600 V Tape on Full reel
 

Infineon Technologies IGB10N60TATMA1 IGBT TO 263 600 V Tape on Full reel

Additional technical information: (UGE(th)) Gate emitter threshold voltage 4.6 V; (ICpulse) Pulsed collector current: 30 A.; Collector current: 24 A; Collector emitter reverse voltage U(CES): 600 V; Enclosure type (semiconductors): TO 263; Mounting type:...


 
Image of Infineon Technologies IGW15N120H3FKSA1 IGBT TO 247 1200 V Tube
 

Infineon Technologies IGW15N120H3FKSA1 IGBT TO 247 1200 V Tube

Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.0 V; (ICpulse) Pulsed collector current: 60 A.; Collector current: 30 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting type:...


 
Image of Infineon Technologies IGW25N120H3FKSA1 IGBT TO 247 1200 V Tube
 

Infineon Technologies IGW25N120H3FKSA1 IGBT TO 247 1200 V Tube

Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.8 V; (ICpulse) Pulsed collector current: 100 A.; Collector current: 50 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting...