ON Semiconductor Transistor (BJT) - Discrete MJ802 TO 3 No. of channels 1 NPN

Collector current: 30 A; Collector cutoff current: 1 mA; Collector emitter voltage U(CEO): 90 V; Collector-emitter saturation voltage (max.): 800 mV; DC current gain (hFE): 25; DC current gain hFE - reference current: 7.5 A; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 200 W; Transit frequency f(T): 2 MHz; Type (transistors): NPN

Price: 11.99 from Conrad Electronic