ON Semiconductor Transistor (BJT) - Discrete 2N5550TA TO 92 3 No. of channels 1 NPN

Collector current: 600 mA; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 140 V; Collector-emitter saturation voltage (max.): 250 mV; DC current gain (hFE): 60; DC current gain hFE - reference current: 10 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 92 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 625 mW; Transit frequency f(T): 300 MHz; Type (transistors): NPN

Price: 0.15 from Conrad Electronic