Nexperia Transistor (BJT) - Discrete BC856BW,115 SOT 323 No. of channels 1 PNP Tape cut

Collector current: -100 mA; Collector cutoff current: -15 nA; Collector emitter voltage U(CEO): -65 V; Collector-emitter saturation voltage (max.): -600 mV; DC current gain (hFE): 220; DC current gain hFE - reference current: -2 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 323; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut; Power (max) P(TOT): 200 mW; Series (semiconductors): Technique automobile/AEC-Q101; Transit frequency f(T): 100 MHz; Type (transistors): PNP

Price: 0.10 from Conrad Electronic