Infineon Technologies IRL2910PBF MOSFET 1 N-channel 200 W TO 220

C(ISS): 3700 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220; I(d): 55 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 200 W; Q(G): 140 nC; Q(G) reference voltage: 5 V; R(DS)(on): 26 mΩ; R(DS)(on) reference current: 29 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Logic level gate; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.: 2 V; U(GS)(th) reference current (max.): 250 µA

Price: 3.29 from Conrad Electronic