Image of Infineon Technologies IRF1018ESPBF-GURT MOSFET 1 N-channel 110 W D2PAK
 

Infineon Technologies IRF1018ESPBF-GURT MOSFET 1 N-channel 110 W D2PAK

Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): D2PAK; I(d): 79 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.0084 Ω; Type (transistors): N-channel

Price: 1.99 from Conrad Electronic

Stockist Catalogue Product Name Price  
Conrad Electronic Infineon Technologies IRF1018ESPBF-GURT MOSFET 1 N-channel 110 W D2PAK 1.99 Visit Store