Infineon Technologies IRF1018EPBF MOSFET 1 N-channel 110 W TO 220AB

C(ISS): 2290 pF; C(ISS) reference voltage: 50 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 220AB; I(d): 79 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 110 W; Q(G): 69 nC; Q(G) reference voltage: 10 V; R(DS)(on): 8.4 mΩ; R(DS)(on) reference current: 47 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 60 V; U(GS)(th) max.: 4 V; U(GS)(th) reference current (max.): 100 µA

Price: 1.79 from Conrad Electronic