Diotec Transistor (BJT) - Discrete BC846B SOT 23 NPN

Additional technical information: Type SMDSOT-23 housingCollector emitter voltage - VCEO 65 VDC collector current - IC: 100 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,250 W.Collector base current ratio - hfe: 290VCE 5 VIC 2 mACollector saturation voltage - VCEsat 600 mVIC 100 mAIB 5 mATransit frequency - ft:300 MHzIC 10 mAVCE 5 VF 100 MHz; Collector current: 100 mA; Collector emitter voltage U(CEO): 65 V; Collector-emitter saturation voltage (max.): 600 mV; DC current gain (hFE): 290; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.25 W; Transit frequency f(T): 100 MHz; Type (transistors): NPN

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